Cerium Laboratories LLC

Professional analytical testing service using vapor phase decomposition combined with HR-ICP-MS to detect and measure metallic trace contaminants on silicon wafer surfaces.

Total Reflection X-Ray Fluorescence (TXRF) instrument utilized for trace metal analysis on silicon wafer surfaces.

An analytical instrument used for secondary ion mass spectroscopy and semiconductor testing applications.

A dynamic magnetic sector secondary ion mass spectroscopy system used for high-sensitivity depth profiling and trace element analysis.

Inductively coupled plasma optical emission spectrometry instrument used for qualitatively measuring major, minor and bulk trace elements in liquid suspensions and solids.

Vapor Phase Decomposition Inductively Coupled Mass Spectroscopy service utilizing vapor phase decomposition sample preparation to collect trace elements on the surface of a silicon wafer for HR-ICP-MS analysis.

Analytical testing service utilizing Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Energy Dispersive Spectroscopy (EDS), and Electron Energy Loss Spectroscopy (EELS) for atomic scale metrology, structural phase determination, and compositional mapping.

An X-ray photoelectron spectroscopy instrument used for surface chemical analysis to measure elements and chemical states of materials.

Testing high purity materials such as silicon and quartz for metals contamination down to single digit ppts.

A high resolution inductively coupled plasma mass spectrometer used to identify and measure trace metals in liquid solutions down to sub-ppt concentrations.

Rutherford Backscattering (RBS) analysis is a non-destructive ion beam analysis technique using a high-energy ion beam to provide chemical information, atomic number, and thickness of thin-film materials.

An X-ray diffractometer instrument used for X-ray diffraction (XRD) and X-ray reflectivity (XRR) analysis to examine crystallographic structures, thin-film thickness, interfacial roughness, and density.

Monitoring of ultra pure water point of use for trace metals and organics.

An ion beam analysis technique used to depth profile light elements like hydrogen and deuterium in thin-films and bulk crystalline materials.

Scanning electron microscope used for high-resolution imaging and structural analysis of semiconductor and material samples.

Scanning Electron Microscope equipped with a Noran System 6 EDS detector used for imaging and elemental analysis.

Raman spectrometer with capability for 514, 488 and 785 nm used for inelastic light scattering analysis and chemical characterization of materials.

Dual beam system utilizing a focused ion beam and scanning electron microscope columns for high precision sample preparation and analysis.

High purity solvents and acids testing for metals contamination with detection limits as low as single digit parts per trillion (ppt).

Focused Ion Beam instrument equipped with an Omniprobe in-situ lift-out system and STEM capabilities for precise sample extraction.

Automated device utilized for measuring the total amount of organic carbon in water solutions.

Ion chromatography instrument used for detecting anions.

Ion chromatography instrument used for detecting anions.

Novel approaches for testing impurities in gases.