Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
Inventors
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Assignees
MemberParagrafParagrafParagraf specializes in the development and manufacture of wafer-scale, silicon-compatible graphene electronic devices and sensors. Utilizing a proprietary process for direct, contamination-free graphene synthesis, the company delivers scalable solutions for magnetic field sensing, molecular and biosensing, and advanced electronics integration. These technologies address challenges in cryogenics, quantum computing, automotive, aerospace, environmental monitoring, and healthcare. With a focus on large-scale integration of 2D materials, Paragraf advances next-generation sensors and components for demanding and extreme environments.
Paragraf specializes in the development and manufacture of wafer-scale, silicon-compatible graphene electronic devices and sensors. Utilizing a proprietary process for direct, contamination-free graphene synthesis, the company delivers scalable solutions for magnetic field sensing, molecular and biosensing, and advanced electronics integration. These technologies address challenges in cryogenics, quantum computing, automotive, aerospace, environmental monitoring, and healthcare. With a focus on large-scale integration of 2D materials, Paragraf advances next-generation sensors and components for demanding and extreme environments.
Publication Number
US-9859394-B2
Publication Date
2018-01-02
Expiration Date
Abstract
Provided herein are devices, systems, and methods of employing the same for the performance of bioinformatics analysis. The apparatuses and methods of the disclosure are directed in part to large scale graphene FET sensors, arrays, and integrated circuits employing the same for analyte measurements. The present GFET sensors, arrays, and integrated circuits may be fabricated using conventional CMOS processing techniques based on improved GFET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense GFET sensor based arrays. Improved fabrication techniques employing graphene as a reaction layer provide for rapid data acquisition from small sensors to large and dense arrays of sensors. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes, including DNA hybridization and/or sequencing reactions. Accordingly, GFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis within a gated reaction chamber of the GFET based sensor.
Core Innovation
Provided herein are devices, systems, and methods directed in part to large scale graphene FET sensors, arrays, and integrated circuits employing the same for analyte measurements, which may be fabricated using conventional CMOS processing techniques based on improved GFET pixel and array designs that increase measurement sensitivity and accuracy and facilitate significantly small pixel sizes and dense GFET sensor based arrays.
The background identifies a problem in nucleic acid sequencing and electronic sensing where conventional MOSFET/ISFET devices suffer from lack of sensitivity and degraded signal-to-noise as transistor geometries scale, and states that what is needed is a FET device configured to include a shorter gate and thinner gate-controlled region to increase sensor sensitivity for biological applications such as nucleic acid sequencing.
The disclosure addresses this by providing chemically-sensitive field-effect transistors and arrays that employ one-dimensional, two-dimensional, or three-dimensional reaction layers (including graphene and other 2D materials), well or chamber solution-gated reaction zones, optional oxide and passivation layers, and optional ion-selective permeable membranes, and by configuring circuitry and computing components to generate and compare reference and chemical reaction I-V and I-Vg curves for detecting analytes, pH changes, and binding events such as DNA hybridization and sequencing reactions.
Claims Coverage
The patent contains three independent claims directed to methods for forming a semiconductor wafer with a two-dimensional material layer and associated dielectric, via, and interconnect structures; the main inventive features extracted from the claims are listed below.
Patterning of two-dimensional material channels aligned with interconnect lines
Patterning a 2D material layer to define a plurality of 2D material channels, each of the plurality of 2D material channels aligned with a corresponding interconnect line of a plurality of interconnect lines on a semiconductor wafer.
Dielectric deposition over 2D material channels
Depositing a first dielectric layer over each of the plurality of 2D material channels.
Opening holes or trenches aligned to channels and interconnects
Opening a plurality of holes or trenches in the first dielectric layer, wherein some holes or trenches are aligned to the plurality of 2D material channels and some are aligned to the plurality of interconnect lines.
Creation of vias contacting interconnect lines and 2D channels
Depositing a conductive material in each of the plurality of holes or trenches to create a plurality of vias that contact the plurality of interconnect lines and the plurality of 2D material channels.
Second interconnect layer contacting vias
Depositing and patterning a set of second plurality of interconnect lines over the dielectric layer and contacting the plurality of vias.
Second dielectric layer and pad exposure
Depositing a second dielectric layer over the first dielectric layer and the second plurality of interconnect lines and patterning and opening holes or trenches in the second dielectric layer to expose portions of the second plurality of interconnect lines for use as pads.
Exposure of 2D material channels through dielectric openings
Patterning and opening the plurality of holes or trenches in the second and first dielectric layers to expose portions of the plurality of 2D material channels.
Use of an etch stop layer over 2D channels
Depositing an etch stop layer over the plurality of 2D material channels (as set forth in the claims that include an etch stop layer) before subsequent dielectric deposition and via formation.
Anisotropic etching to expose the etch stop layer
Patterning and opening the plurality of holes or trenches in the second and first dielectric layers using an anisotropic etching process to expose the etch stop layer over the plurality of 2D material channels, then opening the holes or trenches in the etch stop layer to expose portions of the 2D material channels.
The independent claims define a sequence of wafer-level structures and interconnect arrangements for integrating two-dimensional material channels (e.g., graphene) with dielectric layers, vias, and interconnects, optionally including an etch stop layer and use of anisotropic etching to expose channel regions.
Stated Advantages
Increased measurement sensitivity and accuracy of FET sensors and arrays.
Facilitation of significantly smaller sensor/gate sizes and dense GFET sensor based arrays (higher sensor density).
Rapid data acquisition from small sensors to large and dense arrays of sensors.
Compatibility with conventional CMOS processing techniques enabling scalable fabrication and use in integrated circuits.
Documented Applications
Detection of presence and/or concentration changes of various analyte types in chemical and biological processes, including monitoring ion concentration (pH) and other analyte concentrations.
DNA hybridization detection.
DNA and RNA sequencing, including sequencing by synthesis approaches that monitor pH or binding events in solution-gated chambers.
Whole genome analysis and genome typing analysis.
Micro-array analysis and panels analysis.
Exome analysis.
Micro-biome analysis.
Clinical analysis, including cancer analysis, non-invasive prenatal testing (NIPT) analysis, and UCS analysis.
Nucleotide and protein sequencing applications described as enabled by 1D/2D/3D reaction layer sensors.
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