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Publication Number
US-8883015-B2
Publication Date
2014-11-11
Expiration Date
Abstract
A method of producing projections on a patch including providing a mask on a substrate and etching the substrate using an etchant and a passivant to thereby control the etching process and form the projections, wherein the passivant does not include oxygen.
Core Innovation
A method of producing projections on a patch is described, wherein a mask is provided on a substrate and the substrate is etched using a mixture of an etchant and a passivant to thereby control the etching process and form the projections. The etching process is controlled by varying a ratio of the etchant to the passivant in the mixture, and the passivant does not include oxygen.
The document describes that varying the etchant-to-passivant ratio and other etch parameters such as gas flow and system pressure tunes the etch profile and uniformity by adjusting isotropy/anisotropy and reducing concave profiles and the bullseye effect. Projection geometries including straight, convex, and stepped profiles are enabled by the controlled etching, and patch/projection geometry ranges and projection density are discussed together with resulting projection characteristics.
Claims Coverage
The partial content provides one independent claim. It covers a projection-forming method on a patch where etching is controlled by an oxygen-free etchant/passivant mixture ratio within a specified range.
Mask on a substrate followed by etching with an etchant-passivant mixture to form projections on a patch
Providing a mask on a substrate and etching the substrate using a mixture of an etchant and a passivant to control the etching process and form the projections on the patch.
Oxygen-free passivant and controlled etchant-to-passivant ratio
Controlling the etching process by varying a ratio of the etchant to the passivant in the mixture, wherein the ratio is in the range of 0.25 to 0.60, and wherein the passivant does not include oxygen.
Overall, the claim coverage focuses on forming projections on a patch by masking a substrate and controlling the substrate etching using an oxygen-free etchant/passivant mixture, with the etchant-to-passivant ratio constrained to 0.25 to 0.60.
Stated Advantages
Documented Applications
No documented applications found
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