Biochip having image sensor with back side illumination photodiode
Inventors
Lee, Byoung Su • Lee, Do Young
Assignees
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Abstract
A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer.
Core Innovation
A biochip is provided with an image sensor having a back side illumination photodiode structure. The biochip includes a biochip layer and an image sensor layer attached to and disposed below the biochip layer, and the image sensor layer is configured to sense light with biochemical reaction information emitted from the biochip layer.
The image sensor layer includes a plurality of light sensing parts that receive light directed toward a back side of a wafer. The light sensing parts comprise a plurality of back side illumination photodiodes formed in an epitaxial layer of the wafer, so that the light emitted from reaction regions in the biochip layer is directly received and absorbed by the photodiodes from the wafer back side.
An interlayer dielectric is formed under the epitaxial layer, and a plurality of metal wiring lines are formed in the interlayer dielectric. The arrangement is contrasted with front side illumination architectures in which metal wiring line absorption can affect light sensing, and the biochip layer is placed away from circuit regions to reduce photodiode/circuit degradation caused by biochip-layer surface treatment and infiltration of reaction solutions.
Claims Coverage
The partial set provides one independent claim and several dependent refinements. The independent claim covers a biochip architecture that couples a biochemical-reaction biochip layer to a wafer back-side illumination photodiode image sensor layer, with epitaxial photodiodes and specific wiring dielectric placement under the epitaxial layer.
Biochip with back side illumination photodiode image sensor layer for biochemical reaction light
A biochip having an image sensor with a back side illumination photodiode structure, comprising a biochip layer and an image sensor layer attached to and disposed below the biochip layer and configured to sense light with biochemical reaction information emitted from the biochip layer.
Epitaxial-layer back side illumination photodiodes receiving light toward a wafer back side
The image sensor layer includes a plurality of light sensing parts that receive the light directed toward a back side of a wafer, wherein the light sensing parts comprise a plurality of back side illumination photodiodes formed in an epitaxial layer of the wafer.
Interlayer dielectric with metal wiring lines formed under the epitaxial layer
An interlayer dielectric is formed under the epitaxial layer, and a plurality of metal wiring lines are formed in the interlayer dielectric.
Overall, the independent claim requires a stacked biochip layer above a back side illumination photodiode image sensor layer, where epitaxial-layer photodiodes receive biochemical-reaction-emitted light from the wafer back side, and where wiring is implemented as metal wiring lines in an interlayer dielectric under the epitaxial layer.
Stated Advantages
Improved light sensitivity compared with front side illumination structures.
Reduced photodiode/circuit degradation caused by biochip-layer surface treatment and infiltration of reaction solutions by placing the biochip layer away from circuit regions.
Documented Applications
Sensing light with biochemical reaction information emitted from groove-shaped reaction regions using a back side illumination biochip image sensor architecture.
Biochemical reaction sensing using target and reference samples, including antigen–antibody biochemical reaction and complementary binding of DNA bases (including a genetically engineered gene reference).
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