Dynamic refresh rate control
Inventors
Deng, Liang • Rohrer, Norman J. • Yang, Yizhang • MITTAL, Arpit
Assignees
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Publication Number
US-12763126-B2
Publication Date
2026-10-13
Expiration Date
Abstract
In an embodiment, a memory controller in an integrated circuit may generate refreshes for one or more DRAMs coupled to the integrated circuit according to a refresh rate. The integrated circuit may include one or more temperature sensors. A rate of change of the temperature may be determined from the temperature sensors. If the rate is greater than a threshold, the memory controller may generate refreshes according to a refresh rate specified by the DRAMs. If the rate is less than the threshold, the memory controller may generate refreshes at a reduced refresh rate.
Core Innovation
The invention uses temperature-change rates derived from consecutive readings of on-chip temperature sensors to determine a refresh rate for dynamic random access memory (DRAM). A threshold selects the DRAM-specified rate when temperature is changing rapidly and a reduced rate when temperature change is slow; the reduced rate can be scaled to the maximum measured temperature. The memory controller refreshes the DRAM at the determined rate.
The described problem is that DRAM temperature sensors can be coarse and that hot spots require margins in refresh control. The described approach uses temperature information from multiple sensors to adjust DRAM refresh behavior, addressing those limitations while maintaining data integrity and reducing refresh power consumption. The patent describes an integrated circuit, a method, and a system for this temperature-based refresh control.
Claims Coverage
The claims cover three inventive features directed to an integrated circuit, a method, and a system for determining a DRAM refresh rate based on temperature change rates derived from consecutive sensor readings and refreshing the DRAM at that rate.
Integrated circuit for temperature-based DRAM refresh
A plurality of temperature sensors and a memory controller configured to determine, for at least one DRAM, a refresh rate based on a temperature change rate derived from consecutive temperatures sensed by a given sensor, and to refresh the DRAM at the determined refresh rate.
Method for temperature-based DRAM refresh
Determining a temperature change rate from consecutive temperatures sensed by a given sensor among a plurality of sensors in an integrated circuit; determining, by the memory controller, a DRAM refresh rate based on that rate; and refreshing the DRAM at the determined rate.
System for temperature-based DRAM refresh
A plurality of temperature sensors and a memory controller included in an integrated circuit, configured to determine a refresh rate based on a temperature change rate determined using consecutive temperatures sensed by one or more sensors, and to refresh at least one DRAM at the determined rate.
Together, the three inventive features cover integrated-circuit, method, and system implementations that use sensor-derived temperature change rates to set and apply a DRAM refresh rate.
Stated Advantages
Reduces refresh power consumption.
Maintains data integrity while addressing DRAM temperature-sensor coarseness and hot-spot margins.
Documented Applications
Temperature-based control of refresh rates for at least one DRAM in an integrated circuit or system.
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