Methods for detection using optical emission spectroscopy
Inventors
ZHU, ZUOMING • Hilkene, Martin A. • SHERVEGAR, Avinash • SRIVASTAVA, Surendra Singh • Moradian, Ala • LAU, SHU-KWAN • Ye, Zhiyuan • CHOO, Enle • CHANG, Flora Fong-Song • MARATH SANKARATHODI, Bindusagar • Liu, Patricia M. • Sanchez, Errol Antonio C. • Lin, Jenny • Myo, Nyi O. • CHU, SCHUBERT S.
Assignees
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Publication Number
US-12449309-B2
Publication Date
2025-10-21
Expiration Date
Abstract
Methods for detection using optical emission spectroscopy in which an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.
Core Innovation
The invention relates to optical emission spectroscopy detection in a semiconductor deposition process chamber, including an epitaxial chamber. Photons emitted during the process travel through a foreline and are monitored by an optical emission spectrometer, which identifies emission peaks to monitor an elemental composition of one or more precursors by detecting emitted photons through the foreline.
An associated controller receives input signals associated with the emission peaks from the optical emission spectrometer, compares the input signals to stored values, and adjusts process variables within the process chamber or epitaxial chamber based on the comparison. The comparison is used to adjust deposition conditions in real time.
The foreline configuration is used to manage OES access and related control during deposition and residue assessment. A control valve proximate the optical emission spectrometer is arranged in the foreline, and foreline valve operations can be used to close or open the control valve proximate the optical emission spectrometer. The controller can determine whether to trigger a chamber clean process by comparing input signals corresponding to emission peaks of a first series of photons from a first residue and a second series of photons from a second residue, where the residues are detected from the process chamber via the foreline and optical emission spectrometer.
Claims Coverage
The independent claims cover three inventive features: OES-based adjustment of process variables using emission peaks transmitted through a foreline, real-time adjustment in an epitaxial chamber using a foreline control valve, and determination of whether to trigger a chamber clean process by comparing OES signals from residues.
Adjusting process variables based on OES emission peaks via foreline spectrometer signals
Flowing one or more precursors into the process chamber; performing a deposition process; monitoring an elemental composition of the one or more precursors by identifying emission peaks of emitted photons through a foreline with an optical emission spectrometer; sending input signals associated with the emission peaks from the optical emission spectrometer to a controller; comparing the input signals to stored values; and adjusting process variables of the deposition process within the process chamber based on the comparison.
Real-time adjustment in an epitaxial chamber using a foreline control valve and OES peaks
Opening a control valve proximate an optical emission spectrometer, wherein the control valve is arranged in a foreline; flowing one or more precursors into the epitaxial chamber; performing a deposition process within the epitaxial chamber; monitoring an elemental composition of the one or more precursors by identifying emission peaks of emitted photons from the epitaxial chamber through a foreline with an optical emission spectrometer; sending input signals associated with the emission peaks from the optical emission spectrometer to a controller; comparing the input signals to stored values; and adjusting process variables within the epitaxial chamber in real time based on the comparison.
Triggering chamber clean process by comparing OES residue signals from foreline photons
Detecting an elemental composition of a first residue from the process chamber by identifying emission peaks of a first series of photons emitted through a foreline with an optical emission spectrometer; sending a first series of input signals associated with the emission peaks of the first series of photons from the optical emission spectrometer to a controller; storing the first series of input signals in the controller; closing a control valve proximate the optical emission spectrometer, wherein the control valve is arranged in the foreline; flowing one or more precursors into the process chamber; performing a process within the process chamber; stopping the flow of the one or more precursors; opening the control valve proximate the optical emission spectrometer; detecting an elemental composition of a second residue from the process chamber by identifying emission peaks of a second series of photons emitted through the foreline with the optical emission spectrometer; sending a second series of input signals associated with emission peaks of the second series of photons from the optical emission spectrometer to the controller; storing the second series of input signals in the controller; comparing the first series of input signals to the second series of input signals; determining whether to trigger a chamber clean process based on the comparison; and triggering, by the controller, a chamber clean when pre-determined criteria between the first series of input signal and the second series of input signals is met.
The core coverage is OES-based monitoring of elemental composition using emission peaks of photons transmitted through a foreline to provide input signals to a controller. The controller compares those signals to stored values to adjust deposition process variables, including real-time adjustment in an epitaxial chamber, and compares OES signals from residues to determine whether to trigger a chamber clean process.
Stated Advantages
Maintain chamber in production.
Avoid manual inspection.
Documented Applications
Adjusting process variables during a deposition process in a process chamber, including epitaxial deposition, by using OES emission peak monitoring through a foreline and controller comparison to stored values.
Determining whether to trigger a chamber clean process by comparing OES signals corresponding to elemental compositions of residues from a process chamber before and after a process, based on predetermined criteria.
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