Matrix-based characterization and measurements for semiconductor thin-film material
Inventors
Phan, Thaibao • Wang, Evan W. • FAN, Jonathan A.
Assignees
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Publication Number
US-12405223-B2
Publication Date
2025-09-02
Expiration Date
Abstract
Certain examples are directed to methods for detection of anomalies in semiconductor thin-film materials, such as strains, defects and the like, that may precipitate defects in semiconductor processing steps and may adversely impact device and system-level functionality, processing, and yields. Certain methods use filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a semiconductor-related material sample, and providing a set of sample-characterizing response data based on factors such as sets of polarization-state values, different wavelengths associated with the polarization states, and/or light-incidence angles characterizing separation of the different polarization states. Based on these factors, the types and severities of such anomalies may be analyzed and the related defects remedied.
Core Innovation
The invention provides a method for detection of anomalies in semiconductor thin-film materials by using filtering optics to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a sample. The filtering optics include a microlens array stacked with a diffraction grating, and the filter-separated light beams are associated with polarization-state information that is carried forward into sample-characterizing measurements.
The invention provides sample-characterizing response data by passing light through the filtering optics towards an image sensor. The response data characterizes the sample relative to distinct pixels defined by microlenses in the microlens array, and is based on at least two of polarization-state values respectively associated with the filter-separated polarization states, different wavelengths associated with the different polarization states, and incidence angles of light arising from or caused by further processing of the filter-separated light beams.
The invention analyzes the semiconductor thin-film material in response to the provided sample-characterizing response data to detect anomalies. The approach is framed as enabling image-wide anomaly assessment using polarization-state-associated light beams and pixel-associated response data, with analysis performed based on the polarization-state values, wavelengths, and/or incidence angles reflected in the response data.
Claims Coverage
Independent claim clm-00001 sets a full method chain for detecting anomalies in semiconductor thin-film materials using filtering optics that provide filter-separated polarization-state-associated beams, acquiring pixel-resolved sample-characterizing response data using an image sensor, and analyzing the response data. No other independent claim text is provided in the partial content; therefore only inventive features from clm-00001 can be extracted from the supplied material.
Filtering optics with microlens array stacked with diffraction grating
Using filtering optics, including a microlens array stacked with a diffraction grating, to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a sample of semiconductor thin-film material.
Pixel-defined sample-characterizing response data via image sensor
Passing light through the filtering optics towards an image sensor to provide sample-characterizing response data characterizing the sample relative to distinct pixels defined by microlenses in the microlens array, based on at least two of sets of polarization-state values respectively associated with the filter-separated ones of the different polarization states, different wavelengths associated with the different polarization states, and incidence angles of light arising from or caused by further processing of the filter-separated ones of the different polarization states.
Analyzing sample based on response data to detect anomalies
Analyzing, in response to the step of providing a set of sample-characterizing response data, the semiconductor thin-film material.
The supplied independent claim coverage centers on an end-to-end anomaly detection workflow: filtering optics that generate polarization-state-associated, filter-separated light beams; pixel-resolved response data acquisition using an image sensor with microlens-defined pixels; and analysis of the semiconductor thin-film material based on polarization-state values, wavelengths, and/or incidence angles reflected in the response data. No additional independent claim inventive features can be extracted because no other independent claim text is included in the partial content.
Stated Advantages
Snapshot imaging of the Mueller matrix without sequential scanning or slow Fourier-domain processing.
Robustness considerations, including choosing an optimal polarization basis to minimize matrix condition number.
Documented Applications
Detection of anomalies and defects in semiconductor thin-film materials using Mueller-polarimetry with filter-separated polarization-state-associated light beams and pixel-resolved Mueller-matrix-based analysis.
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