Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
Inventors
Goldsmith, Brett R. • Lerner, Mitchell • Hoffman, Paul
Assignees
Publication Number
US-12298301-B2
Publication Date
2025-05-13
Expiration Date
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Abstract
An apparatus may include a sensor chip fabricated on a semiconductor wafer, the sensor chip may include a graphene channel patterned in a graphene layer disposed on a dielectric substrate. The sensor chip may include a first electrode formed in electrode material so as to form one or more of an edge side contact or a top side contact in electrical contact with a first end of the graphene channel. The sensor chip may include a second electrode formed in electrode material so as to form one or more of an edge side contact or a top-side contact in electrical contact with a second end of the graphene channel. The sensor chip may include an insulation layer that is layered above at least of portion of the graphene layer and is selected from an inorganic oxide layer and an organic layer.
Core Innovation
An apparatus is described comprising a sensor chip fabricated on a semiconductor wafer that includes a graphene channel patterned in a graphene layer disposed on a dielectric substrate, a first electrode formed in electrode material so as to form one or more of an edge side contact or a top side contact in electrical contact with a first end of the graphene channel, a second electrode formed in electrode material so as to form one or more of an edge side contact or a top-side contact in electrical contact with a second end of the graphene channel, and an insulation layer that is layered above at least of portion of the graphene layer and is selected from an inorganic oxide layer and an organic layer.
The disclosure identifies and addresses a problem that in existing sensors various sources of charges above or below a graphene channel may interfere with the ideal functioning of the sensor, and states that the techniques herein relate to devices, systems, and methods that resolve many of the current issues associated with chemical and biological analyses and improve measurement sensitivity and accuracy while facilitating small sensor sizes and dense sensor-based arrays.
The specification describes corresponding fabrication and use approaches at a conceptual level and discloses alternatives for the insulation layer including oxide layers for charge trap screening, organic layers such as self-assembling monolayers and polyimide, ion-permeable oxide structures to allow ions of interest to pass through, and the use of additional passivation layers and patterned passivation openings; [procedural detail omitted for safety]. The disclosure further describes electrode contact geometries (edge, top, and combinations) and architectural options including solution gates, local backgates, dual-gate operation, and gate-all-around configurations to enhance transconductance, sensitivity, and signal characteristics as described in the specification.
Claims Coverage
Two independent claims are present: an apparatus claim and a method claim. The main inventive features concern (1) a graphene channel disposed on a dielectric substrate, (2) electrode contacts formed as edge-side or top-side contacts to channel ends, and (3) an insulation layer above at least a portion of the graphene layer selected from inorganic oxide and organic layers.
Graphene channel patterned in graphene layer disposed on dielectric substrate
A graphene channel patterned in a graphene layer disposed on a dielectric substrate.
Edge-side or top-side electrode contact to first end of graphene channel
A first electrode formed in electrode material so as to form one or more of an edge side contact or a top side contact in electrical contact with a first end of the graphene channel.
Edge-side or top-side electrode contact to second end of graphene channel
A second electrode formed in electrode material so as to form one or more of an edge side contact or a top-side contact in electrical contact with a second end of the graphene channel.
Insulation layer layered above portion of the graphene layer
An insulation layer that is layered above at least of portion of the graphene layer and is selected from an inorganic oxide layer and an organic layer.
Disposing a graphene layer on a surface of a dielectric substrate
Disposing a graphene layer on a surface of a dielectric substrate on the wafer.
Patterning a graphene channel member in the graphene layer
Patterning a graphene channel member in the graphene layer.
Forming electrodes with edge-side or top-side electrical contact to graphene ends
Forming a first electrode and forming a second electrode in electrode material with one or more of an edge side contact or a top-side contact in electrical contact with respective first and second ends of the graphene channel.
Depositing an insulation layer selected from inorganic oxide layer and organic layer
Depositing an insulation layer above at least of portion of the graphene layer wherein the insulation layer is selected from an inorganic oxide layer and an organic layer.
The independent apparatus and method claims focus on a graphene channel on a dielectric substrate with electrodes providing edge-side or top-side contacts to channel ends, together with an insulation layer above at least a portion of the graphene chosen from inorganic oxides or organic materials; the parallel method claim recites disposing and patterning the graphene and forming the described electrode contacts and insulation.
Stated Advantages
Resolve many of the current issues associated with chemical and biological analyses, including nucleic acid hybridization and NGS sequencing.
Increase measurement sensitivity and accuracy of chemically-sensitive field effect transistors.
Facilitate significantly small sensor sizes and dense 1D, 2D, or 3D sensor-based arrays, enabling rapid data acquisition.
Provide charge trap screening and improved contact geometries to improve carrier mobility, transconductance, and reduce noise in sensors.
Enable dual-gate and gate-all-around configurations to improve ChemFET sensitivity, including potential improvement beyond the stated Nernst limit.
Documented Applications
Nucleic acid hybridization and detection.
Next Generation Sequencing (NGS) and DNA/RNA sequencing by synthesis and detection of nucleotide incorporation events.
Genetic diagnostics, genome identification, and genotyping.
Whole genome analysis, genome typing, microarray analysis, panels analysis, and exome analysis.
Microbial and microbiome analysis and species identification.
Clinical analyses including cancer analysis, non-invasive prenatal testing (NIPT), circulating free DNA (cfDNA), blood/plasma/serum analysis, and upstream conserved sequence (UCS) analysis.
Analyte detection and identification, biomolecule analysis, and biosensing applications including antibody and cell monitoring.
Biosensors and sensor arrays fabricated on semiconductor wafers and ROICs for real-time chemical and biological analyses.
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