System and method for monitoring semiconductor processes
Inventors
LAPIDOT, Matan • Rinzan, Mohamed Buhary • Song, Chunhua
Assignees
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Publication Number
US-12266552-B2
Publication Date
2025-04-01
Expiration Date
Abstract
A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.
Core Innovation
A system for monitoring a semiconductor process includes a plurality of sensors selectively arranged within a process chamber. Each sensor issues process signals indicative of a material process occurring proximal to the respective sensor, and a first sensor defines a first spatial position and a first angular orientation, while a second sensor defines a second spatial position and a second angular orientation that differs from the first angular orientation.
A microcontroller receives the process signals and correlates the material process sensed by the first and second sensors with a semiconductor process occurring within the current process chamber to acquire information useful for conducting semiconductor processes. The microcontroller modifies, in real-time, a parameter of the semiconductor process based on the process signals, using the sensor-specific angular orientation and spatial position to acquire the process information.
The multiple sensors monitor deposition or removal at different locations within the process chamber and measure uniformity of the semiconductor process based on the data received from the plurality of sensors. In certain configurations, the different angular orientations and positions facilitate measuring uniformity, and the monitoring enables acquisition of information including three-dimensional thickness profile data associated with the substrate.
Claims Coverage
The independent claims provide a monitoring system and a corresponding monitoring method, each centered on multiple sensors selectively arranged within a process chamber at different angular orientations and positions, with a microcontroller correlating or using the sensor data to measure uniformity and to modify a semiconductor process parameter in real time. Three inventive features are present in the core claim coverage, with additional method language directed to monitoring deposition or removal and measuring uniformity during the monitoring step.
Multiple sensors with different angular orientations and spatial positions
A plurality of sensors selectively arranged within a process chamber and configured to issue process signals indicative of a material process occurring proximal to each of the plurality of sensors, including a first sensor defining a first spatial position within the process chamber and a second sensor defining a second spatial position within the process chamber, the first spatial position having a different angular orientation than the second spatial position.
Microcontroller correlates sensor signals to process information in the current chamber
A microcontroller configured to receive the process signals and correlate the material process sensed by the first and second sensors with a semiconductor process occurring within a current process chamber to acquire information useful for conducting semiconductor processes.
Real-time modification of a process parameter based on sensor signals
A microcontroller configured to modify, in real-time, a parameter of the semiconductor process based on the process signals.
Monitoring deposition or removal at different chamber locations
A plurality of sensors disposed within a process chamber and configured to monitor a deposition or a removal process at different locations within the process chamber, wherein a first sensor has a first angular orientation and a first position in the process chamber and a second sensor has a second angular orientation and second position in the process chamber.
Measuring uniformity based on sensor data to facilitate uniformity measurement
A microcontroller configured to receive data from the plurality of sensors, wherein the microcontroller configured to measure uniformity of the semiconductor process based on the data received from the plurality of sensors, the first angular orientation and first position of the first sensor and the second angular orientation and second position of the second sensor facilitating measuring the uniformity of the semiconductor processes.
Method for real-time process monitoring and modification using angularly oriented sensors
Providing a plurality of sensors within a process chamber including a first sensor having a first angular orientation and a first position and a second sensor having a second angular orientation and second position, monitoring a deposition or a removal process at different locations within the process chamber, measuring uniformity of the semiconductor process based on data received from the plurality of sensors during the monitoring step, and modifying a parameter of the semiconductor process in real-time based on the data received from the first and second sensor.
Across the independent claims, the coverage is directed to a semiconductor process monitoring system and method that use multiple sensors arranged within a process chamber with different angular orientations and spatial positions, where a microcontroller uses the received sensor data to correlate to a semiconductor process in the current chamber and to measure uniformity, including related information such as thickness profile in certain configurations, and then modifies a parameter of the semiconductor process in real time based on the sensor-derived information.
Stated Advantages
Enables measuring uniformity of the semiconductor process based on data received from multiple sensors.
Provides information useful for conducting semiconductor processes by correlating material process sensed by different sensors with a semiconductor process occurring within the current process chamber.
Allows real-time modification of a parameter of the semiconductor process based on the process signals.
Facilitates measuring the uniformity of the semiconductor processes using first and second sensor angular orientation and position.
Documented Applications
Monitoring deposition or removal processes at different locations within a process chamber.
Conducting semiconductor processes using sensor-correlated information from a current process chamber.
Measuring uniformity of a semiconductor process during monitoring and using sensor data to modify a semiconductor process parameter in real time.
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