Unconsumed precursor monitoring

Inventors

Rinzan, Mohamed BuharySong, ChunhuaLakeman, Steve James

Assignees

Inficon Inc

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Publication Number

US-11335575-B2

Patent

Publication Date

2022-05-17

Expiration Date


Abstract

A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Core Innovation

The patent describes a monitoring device for monitoring a fabrication process in a process chamber of a fabrication system that applies a first material to a substrate using a plurality of flow components. The monitoring device includes a quartz crystal microbalance (QCM) sensor configured for exposure to process chemistry in one flow component during the fabrication process, and the QCM sensor comprises a material layer including at least in part the first material accumulated on the QCM sensor in situ during the fabrication process in the process chamber.

A controller measures resonance frequency shifts of the QCM sensor due to interactions between the accumulated material layer on the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor. The approach is extended to monitoring an exhaust line or a supply line of the plurality of flow components, where the resonance frequency shifts correspond to interactions with process chemistry including a precursor gas.

The document further characterizes embodiments in which the QCM sensor interacts with a material layer accumulated in situ and, in particular cases, uses a getter material layer. In such cases, the controller uses the resonance frequency shifts associated with changing mass of the getter material due to interactions with process chemistry to determine a process chamber condition such as an air leak. The patent also describes controlling or limiting QCM exposure, including use of an apparatus for limiting exposure and variants involving controlled temperature or differential multi-QCM checking.

Claims Coverage

The document provides three independent claim scopes, each based on measuring QCM resonance frequency shifts and determining a fabrication process parameter in the process chamber. The independent claims collectively specify three inventive features centered on the in situ accumulated material layer on the QCM sensor, the resonance frequency shift measurement due to interactions with process chemistry, and the derived process parameter or condition.

In situ accumulated material layer on the QCM sensor in one flow component

A QCM sensor for monitoring one flow component of the plurality of flow components, configured for exposure to process chemistry in the one flow component during the fabrication process, wherein the QCM sensor comprises a material layer comprising at least in part the first material applied to the substrate and the material layer is accumulated on the QCM sensor in situ during the fabrication process in the process chamber.

Controller measuring resonance frequency shifts from QCM-material layer interactions

A controller for measuring resonance frequency shifts of the QCM sensor due to interactions between the material layer of the QCM sensor and the process chemistry in the one flow component during the fabrication process.

Determining a parameter of the fabrication process from resonance frequency shifts

The controller determining a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Monitoring an exhaust line or supply line with precursor-gas interaction

A QCM sensor for monitoring the exhaust line or the supply line of the plurality of flow components, configured for exposure to a process chemistry in the exhaust line or the supply line during the fabrication process, wherein the QCM sensor comprises a material layer comprising at least in part the first material applied to the substrate and the material layer is accumulated on the QCM sensor in situ during the fabrication process.

Resonance frequency shifts indicating precursor-gas deposition-related changing mass

A controller measuring resonance frequency shifts due to interactions between the QCM sensor and the process chemistry including a precursor gas in the exhaust line or the supply line during the fabrication process, wherein the mass of the QCM sensor changes due to the unconsumed portion of the precursor gas interacting with the material layer of the QCM sensor.

Deploying and accumulating a material layer on the QCM sensor in situ

A method including deploying a QCM sensor for monitoring one flow component, accumulating a material layer on the QCM sensor during the fabrication process, wherein the material layer comprises at least in part the first material applied to the substrate and the material layer is accumulated on the QCM sensor in situ during the fabrication process.

Across the independent claims, the common claim coverage centers on a QCM sensor with an in situ accumulated material layer exposed to process chemistry in a selected flow component, measuring QCM resonance frequency shifts caused by interactions with that accumulated material layer, and determining a parameter of the fabrication process in the process chamber based on the measured resonance frequency shifts.

Stated Advantages

Not explicitly described in patent.

Documented Applications

Not explicitly described in patent.

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