Nanomaterial-based true random number generator
Inventors
Sims, Patrick Craig • Perez, Israel • Rockway, John D. • Wheeland, Sara R. • Sternberg, Oren
Assignees
Publication Number
US-10983757-B2
Publication Date
2021-04-20
Expiration Date
2039-02-25
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Abstract
A true random number generator including a transistor, a first voltage source, a second voltage source, and a comparator. The transistor has a first electrode, a second electrode, and a third electrode. Two of the electrodes are electrically connected by a channel of conductive nanomaterial. The first voltage source is electrically connected to the first electrode and the second voltage source is electrically connected to the second electrode. The comparator is electrically connected to the third electrode and is configured to classify a measured electrical property at the third electrode as either HIGH or LOW based on a comparison of the measured electrical property with a reference value. The measured electrical property varies over time due to random telegraph signals (RTSs) due to defects in the transistor.
Core Innovation
The invention is a true random number generator comprising a transistor with three electrodes, where two electrodes are connected by a channel of conductive nanomaterial. Two voltage sources are applied to two of the electrodes, and a comparator measures an electrical property at a third electrode, classifying it as either HIGH or LOW based on a reference value. The measured electrical property varies randomly over time due to random telegraph signals (RTSs) caused by defects in the transistor, which produce fluctuations in conductance.
This true random number generator takes advantage of RTS noise, which arises from defects at or near the interface between the dielectric layer and the conductive nanomaterial channel, or in the nanomaterial itself. The defects trap and untrap charge leading to resistance changes between two or more states in the transistor. The device can be implemented in multiple transistor geometries and uses a measured electrical property, such as current or voltage, to generate a binary sequence that is assembled into random numbers.
The problem addressed by this invention is the need for improved true random number generators that overcome disadvantages of existing pseudo-random and true random number generators, such as deterministic outputs, vulnerabilities to attacks, large size, high power requirements, limited bit-rate, and environmental vulnerabilities. The invention provides a compact, low-power, radiation-resistant true random number generator that leverages inherent noise at the nanoscale level due to defects in conductive nanomaterial channels.
Claims Coverage
The patent claims include two independent method claims focusing on generating true random numbers using a transistor with a conductive nanomaterial channel and defect-induced random telegraph signals. Two main inventive features are identified corresponding to each independent claim.
Method for generating true random numbers using RTS noise in a transistor channel
The method involves applying a first voltage to a first electrode of a transistor, applying a second voltage to a second electrode separated from the third electrode by a conductive nanomaterial channel, measuring an electrical property at the third electrode with a comparator configured to classify the property as HIGH or LOW based on reference comparison, where the property varies due to RTSs caused by defects in the conductive nanomaterial channel, sampling the comparator output with a flip-flop circuit to output binary values, and assembling a binary sequence based on this output.
Method introducing defects to generate RTS noise for true random number generation
The method includes introducing defects into the conductive nanomaterial channel to generate RTSs that cause resistance fluctuations, applying voltages to set conductance and induce current flow, measuring a varying electrical property classified as HIGH or LOW by a comparator, sampling with a flip-flop circuit, adjusting voltage to minimize bias between states, and assembling a binary output sequence. The transistor does not have a dedicated trapping layer, and defects can be introduced via chemical, radiation, or intrinsic fabrication processes.
The claims collectively cover methods for generating true random numbers using RTS noise in a conductive nanomaterial channel within a transistor, including defect introduction methods to control noise characteristics, voltage application steps, comparator-based classification of electrical properties, sampling via flip-flop circuits, bias reduction techniques, and assembling binary sequences for use as true random numbers or seeds for pseudo-random generators.
Stated Advantages
The true random number generator has a small size, low weight, and low power requirements compared to prior art TRNGs.
It provides radiation resistance suitable for use in satellites and other demanding environments.
The invention leverages random telegraph signal noise, which is typically undesirable, to produce high-quality true random numbers.
Documented Applications
The true random number generator is useful in unattended sensor networks, unmanned vehicles, and satellites that require small, low-power, and radiation-resistant random number sources.
The binary sequences generated can be used directly as true random binary numbers or to seed pseudo-random number generators.
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