Chemically-sensitive field effect transistor
Inventors
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Assignees
MemberParagrafParagrafParagraf specializes in the development and manufacture of wafer-scale, silicon-compatible graphene electronic devices and sensors. Utilizing a proprietary process for direct, contamination-free graphene synthesis, the company delivers scalable solutions for magnetic field sensing, molecular and biosensing, and advanced electronics integration. These technologies address challenges in cryogenics, quantum computing, automotive, aerospace, environmental monitoring, and healthcare. With a focus on large-scale integration of 2D materials, Paragraf advances next-generation sensors and components for demanding and extreme environments.
Paragraf specializes in the development and manufacture of wafer-scale, silicon-compatible graphene electronic devices and sensors. Utilizing a proprietary process for direct, contamination-free graphene synthesis, the company delivers scalable solutions for magnetic field sensing, molecular and biosensing, and advanced electronics integration. These technologies address challenges in cryogenics, quantum computing, automotive, aerospace, environmental monitoring, and healthcare. With a focus on large-scale integration of 2D materials, Paragraf advances next-generation sensors and components for demanding and extreme environments.
Publication Number
US-10429342-B2
Publication Date
2019-10-01
Expiration Date
Abstract
A chemically-sensitive field effect transistor is disclosed herein. The chemically-sensitive field effect transistor comprises a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain. The channel is composed of a one-dimensional transistor material or a two-dimensional transistor material. The analyte-sensitive dielectric layer is disposed over the channel. An I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.
Core Innovation
The present invention is a chemically-sensitive field effect transistor comprising a CMOS structure comprising a conductive source and a conductive drain, a channel and an analyte-sensitive dielectric layer. The channel extends from the conductive source to the conductive drain and is composed of a one-dimensional transistor material or a two-dimensional transistor material, and an I-V curve or an I-Vg curve is shifted in response to a chemical reaction occurring on or near the chemically-sensitive field effect transistor.
The background identifies limitations in existing nucleic acid sequencing approaches and limitations of MOSFET/ISFET devices when used as biosensors, including a lack of sensor sensitivity and signal to noise characteristics as the semiconductor node scales down and short channel effects that decrease sensor sensitivity. What is needed, therefore, is a FET device configured to include a shorter gate and channels that are very thin in the vertical dimension to allow for increased sensor sensitivity and robustness against short-channel effects for biological applications such as nucleic acid sequencing and genetic diagnostics.
The invention addresses these needs by configuring a chemically-sensitive FET with a thin channel formed from 1D or 2D transistor materials such as graphene or carbon nanotubes, optionally covered by an analyte-sensitive dielectric layer and coupled with a well structure defining a reaction chamber, such that chemical or biological reactions in or near the reaction chamber shift the device I-V or I-Vg characteristics to enable detection.
Claims Coverage
Four independent claims were identified. The main inventive features are summarized below for each independent claim.
Multi-layered structure for performing a sequencing reaction
A multi-layered structure comprising a substrate layer having an extended body, a first insulating layer positioned above the extended body, a second insulating layer positioned above the first insulating layer, source and drain electrodes disposed within the first insulating layer with top and bottom surfaces and opposed side portions, a graphene layer positioned between the first insulating layer and second insulating layer extending between outer side portions of the source and drain electrodes and contacting their top surfaces to form a channel, and a reaction chamber formed by a well structure in the second insulating layer with an opening at the top surface and the graphene layer forming a bottom layer of the reaction chamber configured for receiving and retaining reactants for performing the sequencing reaction.
Multi-layered structure for performing a biological reaction
A multi-layered structure comprising a substrate layer having an extended body, a first insulating layer above the substrate body, source and drain electrodes positioned in or over the first insulating layer separated by a distance, a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes, a graphene layer positioned between the first and second insulating layers extending between the source and drain electrodes to form a channel, and a reaction chamber formed by a well structure in the second insulating layer with an opening extending toward the graphene layer and configured for receiving and retaining one or more of a deoxyribonucleic acid, a ribonucleic acid, and a protein for performing the biological reaction.
Multi-layered structure for performing a biological reaction involving fluidic reagents
A multi-layered structure comprising a substrate layer having an extended body, a first insulating layer above the extended body, source and drain electrodes positioned in or over the first insulating layer separated by a distance, a second insulating layer positioned above the first insulating layer, a graphene layer positioned between the first and second insulating layers substantially extending between outer side portions of the drain and source electrodes to form a channel, and a reaction chamber formed by a well structure in the second insulating layer with an opening and a bottom formed at least by the graphene layer configured for receiving and retaining reagents in a fluid for performing a biological reaction.
Multi-layered structure for performing a biological reaction with graphene bottomed reaction chamber
A multi-layered structure comprising a substrate layer having an extended body, a first insulating layer positioned above the extended body, source and drain electrodes positioned in the first insulating layer separated by a distance, a second insulating layer above the first insulating layer and proximate the source and drain electrodes, a graphene layer positioned between the first and second insulating layers substantially extending between outer side portions of the source and drain electrodes to form a channel there-between, and a reaction chamber formed by a well structure in the second insulating layer having an opening with opposing side portions and a bottom formed by at least the graphene layer configured for receiving and retaining reactants for performing the biological reaction.
The independent claims consistently claim a multi-layered semiconductor structure with source and drain electrodes embedded in an insulating layer, a graphene layer positioned between insulating layers forming a channel between source and drain, and a well-formed reaction chamber in an upper insulating layer with the graphene layer forming at least part of the chamber bottom configured to receive and retain reactants for sequencing or other biological reactions, whereby device I-V or I-Vg characteristics shift in response to reactions.
Stated Advantages
Solves many of the current problems associated with nucleic acid sequencing and genetic diagnostics.
Increased sensor sensitivity and faster detection due to thin 1D or 2D channels and higher carrier mobility compared to doped silicon MOSFETs.
Compatibility with CMOS device fabrication enabling automatic recognition in real time, lower cost, mass production and portability.
Thin vertical channels that are robust against short-channel effects allowing shorter gate lengths and improved sensitivity.
Graphene FET embodiments approach the theoretical 59 mV/pH maximum for an ISFET type device (referred to as the Nernst limit).
Documented Applications
Sequencing of nucleic acids, including nucleic acid sequencing by detecting elongation or hybridization events via shifts in I-V or I-Vg curves.
Genetic diagnostics and hybridization-based detection of genetic variation or presence of genetic markers.
Whole genome analysis, genome typing analysis, genomic panels, exome analysis, microbiome analysis, and clinical analysis including cancer analysis, NIPT analysis and UCS analysis.
pH sensing and detection of hydrogen ion release during nucleotide incorporation in sequencing reactions.
Protein detection and detection of biological compounds via graphene or 1D/2D material FET sensors.
Biosensor arrays and GFET arrays for parallel analysis and high-throughput sensing implemented on CMOS chips.
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