Post design integrated circuit manufacturing obfuscation

Inventors

Levine, NealGahoonia, AmanLloyd, JonPentrack, David W.

Assignees

United States Department of the Army

Publication Number

US-10380302-B1

Publication Date

2019-08-13

Expiration Date

2036-04-27

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Abstract

An integrated circuit includes a plurality of vertically-stacked layers including a front end of line (FEOL) layer and a back end of line (BEOL) layer. The FEOL layer includes individual transistors that are not interconnected. The BEOL layer includes transistor interconnections and no transistors. The transistors are electrically connected to the transistor interconnections by vias within the FEOL ad BEOL layers. The FEOL and BEOL layers each have contact pads on the top and bottom surfaces thereof that are each in alignment with vias, are arranged in a checkerboard pattern, and occupy about fifty percent of the surface area of the FEOL and BEOL layers. The contact pads on a top surface of the FEOL layer are in electrical communication with contact pads on a bottom surface of the BEOL layer to facilitate vertical current flow between the transistors and the transistor interconnections through the vias.

Core Innovation

The invention relates to a method and integrated circuit design aimed at mitigating the risk of intellectual property theft during integrated circuit manufacturing. It involves partitioning an integrated circuit design layout file into multiple design files that separate front-end-of-line (FEOL) sub-circuits containing transistors from back-end-of-line (BEOL) sub-circuits containing transistor interconnections. These sub-circuits are fabricated separately in different foundries on individual substrates and then vertically stacked, so no single foundry has access to the complete circuit functionality information.

The problem solved is the vulnerability of integrated circuit intellectual property during manufacturing, particularly the threat posed by the manufacturing foundry which might not be fully vetted. Traditional obfuscation and staff vetting techniques are insufficient due to the increasing sophistication of adversaries and human error risks. This invention effectively prevents any one manufacturing entity from deducing the overall circuit function or misappropriating the intellectual property, by structurally partitioning the design and outsourcing fabrication to multiple foundries.

The innovation preserves the typical vertical architecture of integrated circuits by having the FEOL layer contain unconnected transistors and the BEOL layers contain transistor interconnections without transistor structures. The layers have contact pads arranged in a checkerboard pattern covering about fifty percent of the surface to enable vertical electrical connections via aligned vias. This design allows vertical current flow between transistors and interconnections while maintaining the separation of functional information, and does not require the original circuit designer to alter the basic design process.

Claims Coverage

The patent contains one independent claim describing a three-dimensional integrated circuit with specific layered structural features.

Three-dimensional integrated circuit structure partitioned into FEOL and BEOL layers

A three-dimensional integrated circuit comprises multiple vertically stacked layers including a front end of line (FEOL) layer and at least one back end of line (BEOL) layer. The FEOL layer includes multiple individual transistors that are not interconnected, while the BEOL layer includes transistor interconnections but no transistors.

Electrical interconnection via aligned contact pads and vias

The individual transistors in the FEOL layer are electrically connected to transistor interconnections in the BEOL layer by multiple vias within the FEOL and BEOL layers. Both FEOL and BEOL layers have contact pads on top and bottom surfaces that are aligned with the vias. These contact pads are arranged in a checkerboard pattern and occupy about fifty percent of their respective surface areas.

Vertical current flow facilitation between layers

The contact pads on the top surface of the FEOL layer are in electrical communication with contact pads on the bottom surface of the BEOL layer, facilitating vertical current flow between the individual transistors of the FEOL layer and the transistor interconnections of the BEOL layer through the vias.

These inventive features collectively define a vertically stacked integrated circuit structure with separated transistor and interconnect layers, connected through a specifically arranged pattern of vias and contact pads facilitating vertical electrical connections, thereby enabling the manufacturing obfuscation technique.

Stated Advantages

Provides significant integrity and confidentiality protection by ensuring no individual manufacturing foundry can deduce the overall function of the integrated circuit.

Eliminates the need for the circuit designer to alter the original design methodology, allowing the partitioning step to be performed after design completion.

Transforms a complete set of layout files containing sensitive circuit function information into multiple layout files, none of which alone reveal enough to deduce the full circuit function.

Expands the contact pad surface area to facilitate a more suitable environment for 3D stacking and vertical current flow.

Documented Applications

Mitigation of intellectual property theft risk in manufacturing of critical integrated circuits used for banking, civic infrastructure, and defense by partitioning IC designs and fabricating layers at separate foundries.

Application in manufacturing vertically stacked three-dimensional integrated circuits where transistor structures and interconnections are fabricated on separate substrates and assembled later to recreate the full IC.

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