Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
Inventors
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Assignees
MemberParagrafParagrafParagraf specializes in the development and manufacture of wafer-scale, silicon-compatible graphene electronic devices and sensors. Utilizing a proprietary process for direct, contamination-free graphene synthesis, the company delivers scalable solutions for magnetic field sensing, molecular and biosensing, and advanced electronics integration. These technologies address challenges in cryogenics, quantum computing, automotive, aerospace, environmental monitoring, and healthcare. With a focus on large-scale integration of 2D materials, Paragraf advances next-generation sensors and components for demanding and extreme environments.
Paragraf specializes in the development and manufacture of wafer-scale, silicon-compatible graphene electronic devices and sensors. Utilizing a proprietary process for direct, contamination-free graphene synthesis, the company delivers scalable solutions for magnetic field sensing, molecular and biosensing, and advanced electronics integration. These technologies address challenges in cryogenics, quantum computing, automotive, aerospace, environmental monitoring, and healthcare. With a focus on large-scale integration of 2D materials, Paragraf advances next-generation sensors and components for demanding and extreme environments.
Publication Number
US-10006910-B2
Publication Date
2018-06-26
Expiration Date
Abstract
This invention concerns Chemically-sensitive Field Effect Transistors (ChemFETs) that are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant ChemFETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor nanomaterial, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. The ChemFET also includes a gate, often the gate voltage is provided through a fluid or solution proximate the ChemFET. Such ChemFETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
Core Innovation
The invention provides Chemically-sensitive Field Effect Transistors (ChemFETs) preferably fabricated using semiconductor fabrication methods on a semiconductor wafer and, in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant ChemFETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor nanomaterial and/or a three-dimensional (3D) transistor material extending from the source to the drain, and may include a gate often provided through a fluid or solution proximate the ChemFET. ChemFETs are preferably configured in independently addressable arrays and may be employed to detect presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
The disclosure addresses shortcomings of conventional NGS systems and ISFET-based sequencing approaches, including lack of sensor sensitivity, poor signal-to-noise characteristics as semiconductor nodes scale, and geometric limits on sensor size and density. The claimed solution is a class of ChemFETs that employ 1D or 2D nanomaterial channels (and optionally 3D structures), solution gating, dual-gate or gate all-around configurations, analyte- or reaction-sensitive layers, and integration with read-out and processing circuitry to increase sensor sensitivity and accuracy, enable smaller sensors and dense arrays, and support detection and sequencing applications while leveraging semiconductor IC fabrication methods.
Claims Coverage
The independent claims disclose three inventive features directed to (1) a multi-layered ChemFET with a graphene channel contacting top surfaces of embedded electrodes, (2) a ChemFET having a one-dimensional or two-dimensional transistor material channel with a well/chamber exposing the channel, and (3) a ChemFET having a two-dimensional transistor material layer and a well opening defined by opposed side portions and a bottom formed by the transistor material.
Multi-layered transistor with graphene channel contacting electrode tops
A chemically-sensitive field effect transistor having a multi-layered structure comprising a substrate layer having an extended body; a first insulating layer positioned above the extended body; a second insulating layer positioned above the first insulating layer; a source electrode and a drain electrode each having top and bottom surfaces with opposed side portions, each of the opposed side portions and bottom surfaces disposed within the first insulating layer and separated by a distance; and a graphene layer positioned between the first and second insulating layers extending between the outer side portion of the source and the outer side portion of the drain thereby forming a channel between the source and drain electrodes, the graphene layer contacting the top surface of the source and drain electrodes.
Well-structured FET with one-dimensional or two-dimensional channel and chamber exposing channel
A chemically-sensitive field effect transistor having a multi-layered structure comprising a substrate layer having an extended body; a first insulating layer positioned above the extended body; a source and a drain electrode positioned in the first insulating layer separated by a channel; a second insulating layer positioned above the first insulating layer; a one-dimensional transistor material layer positioned between the first and second insulating layers and extending between the source and drain electrodes thereby forming a channel; and a well structure provided in the second insulating layer, the well structure having a bottom surface positioned above and in contact with the one-dimensional or two-dimensional transistor material layer and a chamber extending from the top surface to the bottom surface to expose the transistor material within the chamber.
Two-dimensional channel FET with well opening formed by channel material
A chemically-sensitive field effect transistor having a multi-layered structure comprising a substrate layer having an extended body; a first insulating layer positioned above the extended body; a source electrode and a drain electrode positioned in the first insulating layer separated by a channel; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a two-dimensional transistor material layer positioned between the first and second insulating layers and extending over the channel between the source and drain electrodes; and a well structure provided in the second insulating layer, the well structure having an opening defined by opposed side portions and a bottom formed by the one-dimensional or two-dimensional transistor material layer.
The independent claims focus on: layered ChemFET device architectures integrating 1D/2D transistor nanomaterial channels (notably graphene) between insulating layers; source and drain electrode geometries embedded in an insulating layer with the channel contacting electrode top surfaces; and well or chamber structures in an overlying insulating layer that expose the channel or provide a chamber bottom formed by the channel material for solution-gated chemical or biological sensing.
Stated Advantages
Increased sensor sensitivity and accuracy relative to conventional ISFET and MOSFET-based sensors.
Compatibility with semiconductor IC fabrication methods to enable mass production with high quality and economy, leveraging CMOS fabrication.
Smaller sensor sizes and dense sensor arrays enabling high-density, high-throughput detection.
Real-time automatic recognition of signals with lower cost, simpler, faster and portable operation compared to optically-based NGS platforms.
Improved signal-to-noise characteristics and transconductance via 1D/2D/3D channel materials, channel geometry (increased W/L), dual-gate and gate-all-around structures.
Documented Applications
Detection and sequencing of nucleic acids, including DNA and RNA sequencing and nucleic acid hybridization reactions.
Genetic diagnostics, genome identification, species identification, nucleic acid capture, and genotyping.
Next Generation Sequencing (NGS) and sequencing-by-synthesis workflows including detection of base incorporations via ion/charge changes.
Biosensors for analyte detection and identification, including pH and ion-concentration sensing in solution-gated chambers.
Array-based analyses such as whole genome analysis, genome typing analysis, microarray analysis, panels analysis, exome analysis, microbial/microbiome analysis, and genotyping analysis.
Clinical analyses including cancer analysis, non-invasive prenatal testing (NIPT) analysis, cell-free DNA (cfDNA) and blood/plasma/serum analysis.
Use as biosensor formats for assays employing microbeads, antibody–antigen detection, enzyme FETs (EnFETs), and cell monitoring for biologic activity.
Integration with read-out integrated circuits, processors, and bioinformatics modules for base calling, mapping, alignment, sorting, and variant calling.
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